GT Advanced Technologies to Participate at LED Forum Taipei 2013 Event October 16-17

MERRIMACK, N.H., Oct. 14, 2013 (GLOBE NEWSWIRE) — GT Advanced Technologies (Nasdaq:GTAT) is participating in the LED Forum Taipei 2013 event being held in Taipei, Taiwan October 16-17, 2013. GT’s Chief Technology Officer, Dr. Raghavan, will discuss the key elements of HVPE GaN system and the expected advantages the system will provide for manufacturers.

Last May, GT announced that it would develop, manufacture and commercialize a HVPE system incorporating Soitec Phoenix Labs’ (a subsidiary of Soitec) unique and proprietary HVPE technology including its novel and advanced source delivery system that is expected to lower the costs of precursors delivered to the HVPE reactor. The HVPE system will enable the production of low cost GaN templates on sapphire at scale. GT estimates that its HVPE system could lower precursor costs by greater than 80 percent while improving the throughput of expensive MOCVD tools and lowering CAPEX costs by up to 25 percent. The expected target date for the commercial availability of the HVPE system is the second half of 2014.

A link to the LED Forum Taipei 2013 conference agenda can be found at http://seminar.ledinside.com/Ledforum/current/US/agenda/. GT’s presentation can be found on the company’s web site at http://investor.gtat.com/events.cfm.

About GT Advanced Technologies Inc.

GT Advanced Technologies Inc. is a diversified technology company with innovative crystal growth equipment and solutions for the global solar, LED and electronics industries. Our products accelerate the adoption of new advanced materials that improve performance and lower the cost of manufacturing. For additional information about GT Advanced Technologies, please visit www.gtat.com.